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| MITSUBISHI SEMICONDUCTOR THYRISTOR CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20F OUTLINE DRAWING Dimensions in mm 3 (22) 2 1 1 3 3.5 3 1.5 1.6 TYPE NAME M6x1 LOCK WASHER NUT * IT (AV) ......................................................................... 20A * VDRM ............................. 400V/600V/800V/1000V/1200V * IGT ..........................................................................50mA APPLICATION DC motor control, electric furnace control, static switches, DC supply MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- -- Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Typical value Voltage class 8 400 480 320 400 480 320 12 600 720 480 600 720 480 Conditions 16 800 960 640 800 980 640 SOLDERLESS TERMINAL TELEGRAPH WIRE 2.63~6.64mm2 Note: Mica washer and spacer are provided only upon request. 20 1000 1200 800 1000 1000 800 24 1200 1350 960 1200 1200 960 Ratings 31.5 20 300 380 100 5.0 0.5 10 5 2 -30 ~ +125 -30 ~ +125 30 2.94 20 11 2 2.1 3 4.4 1 CATHODE 2 ANODE 3 GATE 14 14 25.5 Commercial frequency, sine half wave, 180 conduction, Tc=86C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current VD=1/2VDRM, ITM=60A, IG=0.1A. Tj=25C, f=60Hz kg*cm N*m g Feb.1999 36 2 3.5 8 19 Unit V V V V V V Unit A A A A2s A/s W W V V A C C MITSUBISHI SEMICONDUCTOR THYRISTOR CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM dv/dt VGT VGD IGT tgt Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical-rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Turn-on time Thermal resistance Contact thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied Tc=25C, ITM=60A, Instantaneous value Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, IT=0.5A Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, IT=0.5A Tc=25C, VD=100V, IT=15A, IG=0.1A Junction to case Case to fin Limits Min. -- -- -- 50 -- 0.25 -- -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 1.8 -- 3.0 -- 50 10 1.0 0.4 Unit mA mA V V V V mA s C/W C/W PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 Tc = 25C 3 2 102 7 5 3 2 101 7 5 3 2 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 320 SURGE ON-STATE CURRENT (A) 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 125C CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS VFGM = 10V PGM = 5W 101 7 5 VGT = 3V PG(AV) = 3 IGT 2 0.5W Tj = 100 IFGM = 125C 7 2A 25C 5 30C 3 2 VGD = 0.25V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 3 2 AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 50 45 40 35 30 25 20 15 10 5 0 0 4 8 12 16 360 RESISTIVE, INDUCTIVE LOADS 20 24 28 32 = 30 60 90 120 180 GATE VOLTAGE (V) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 130 CASE TEMPERATURE (C) 120 110 100 90 80 70 60 50 0 4 8 12 16 20 360 RESISTIVE, INDUCTIVE LOADS AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 BX40-06 FIN 120 120 t3 140 ALUMINUM PLATE 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 360 PAINTED BLACK AND GREASED RESISTIVE, INDUCTIVE LOADS NATURAL = 180 CONVECTION = 90 = 30 60 90 120 180 24 28 32 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 40 120 180 90 35 60 30 = 30 25 20 15 10 5 0 0 4 8 12 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 130 120 110 100 90 80 70 60 50 0 4 8 12 16 20 24 28 32 = 30 60 90 120 180 360 RESISTIVE LOADS 360 RESISTIVE LOADS 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 BX40-06 FIN 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE 100 LOADS NATURAL 80 CONVECTION 60 = 180 40 20 0 0 4 8 90 12 16 20 24 28 32 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 50 270 DC 180 45 120 40 90 35 60 30 25 20 15 10 5 0 0 5 10 15 20 360 RESISTIVE, INDUCTIVE LOADS 25 30 35 40 = 30 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 130 CASE TEMPERATURE (C) 120 110 100 90 80 70 60 50 0 5 10 15 20 25 = 30 360 RESISTIVE, INDUCTIVE LOADS AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 BX40-06 FIN 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE, 100 INDUCTIVE 80 60 40 20 0 0 180 = 90 LOADS NATURAL CONVECTION DC 90 180 270 60 120 DC 30 35 40 5 10 15 20 25 30 35 40 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) CR20F BLOCK FIN BX40-06 OUTLINE DRAWING (Unit: mm) 20 3 M6x1 NAME PLATE (38.5) 2-6.5 NAME PLATE 9.5 60 120 50 19.5 16 99 115 125 30 40 Feb.1999 |
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